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electron tunneling in Chinese

Pronunciation:
How to pronounce "electron tunneling""electron tunneling" in a sentence

Translationmobile phoneMobile

  • 電子穿隧
  • 電子貫穿
  • 電子隧道效應(yīng)

Examples

  • Hot electron tunneling mechanism of current collapse in gan hfet
    溝道熱電子隧穿電流崩塌模型
  • In this paper , the coherent transport characteristics of electrons tunneling through a quantum dot are investigated
    摘要研究了電子隧穿通過量子點(diǎn)的相干輸運(yùn)特性。
  • It is assumed that electron tunneling from silicon into oxide and buildup of interface states are the post - irradiation recovery
    假設(shè)隧道電子從硅進(jìn)入氧化層和界面態(tài)的建立是輻射效應(yīng)的恢復(fù)機(jī)理。
  • It shows that the bias in the post - irradiation recovery period and the ratio of the interface state to the electron tunneling influence the recovery rate
    模擬結(jié)果表明：退火過程所加?xùn)牌珘旱拇笮∫约八淼离娮有?yīng)與建立的界面態(tài)所占比例的不同影響器件的恢復(fù)率。
  • The effects of the operation temperatures , gate voltages , drain - source voltages and magnetic field upon the characteristic of device are analyzed in detail . coulomb blockade and single electron tunneling are observed in the devices . 3
    詳細(xì)地分析了工作溫度、柵極電壓、漏源電壓和磁場對其特性的影響，觀測到明顯的庫侖阻塞效應(yīng)和單電子隧穿效應(yīng)，器件的工作溫度可達(dá)到77k以上。
  • Transmission coefficient of electron tunneling through rectangular barrier has been calculated based on the exact solution of the one - dimensional time - independent schr ? dinger equation with the transfer matrix method ; furthermore , the dependence of the transmission coefficient on the effective masses and parameters of rectangular barrier also has been studied
    摘要利用傳遞矩陣方法精確計算了一維定態(tài)薛定諤方程，求解出電子穿過矩形勢壘的透射系數(shù)，進(jìn)一步研究了該透射系數(shù)與有效質(zhì)量和矩形勢壘參數(shù)的關(guān)系。
  • We have investigated transport properties of electrons in magnetic quantum structures under an applied constant electric field . the transmission coefficient and current density have been calculated for electron tunneling through structures consisting of identical magnetic barriers and magnetic wells and structures consisting of unidentical magnetic barriers and magnetic wells . it is shown that the transmission coefficient of electrons in a wider nonresonance energy region is enhanced under an applied electric field . the resonance is suppressed for electron tunneling through double - barrier magnetic ( dbm ) structures arranged with identical magnetic barriers and magnetic wells . incomplete resonance at zero bias is changed to complete resonance at proper bias for electron tunneling through dbm structures arranged with different magnetic barriers and magnetic wells . the results also indicate that there exist negative conductivity and noticeable size effect in dbm structures
    對磁量子結(jié)構(gòu)中電子在外加恒定電場下的輸運(yùn)性質(zhì)進(jìn)行了研究.分別計算了電子隧穿相同磁壘磁阱和不同磁壘磁阱構(gòu)成的兩種磁量子結(jié)構(gòu)的傳輸概率和電流密度.計算結(jié)果表明，在相當(dāng)寬廣的非共振電子入射能區(qū)，外加電場下電子的傳輸概率比無電場時增加.對于電子隧穿相同磁壘磁阱構(gòu)成的雙磁壘結(jié)構(gòu)，共振減弱；對于電子隧穿不同磁壘磁阱構(gòu)成的雙磁壘結(jié)構(gòu)，無電場作用時的非完全共振在適當(dāng)?shù)钠秒妷合罗D(zhuǎn)化為完全共振，這時的電子可實(shí)現(xiàn)理想的共振隧穿.研究同時表明，磁量子結(jié)構(gòu)中存在著顯著的量子尺寸效應(yīng)和負(fù)微分電導(dǎo)

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